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2SC4073
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4073 500 400 10 5(Pulse10) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=-0.3A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 30typ
(Ta=25C) 2SC4073 Unit
A
V V V MHz pF
13.0min 16.90.3 8.40.2
A
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.2 IB2 (A) -0.4 ton (s) 1max tstg (s) 3max tf (s) 0.5max
2.54
3.9 BCE
IC - VCE Characteristics (Typical)
5
m
60 0m A
400 mA
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
(IC/IB=5) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (s a t)( V )
I C - V BE Temperature Characteristics (Typical)
(VCE=4V) 5
A
Collector Current I C( A)
300m A
3
Collector Current I C (A)
4
IB
=8
00
2 4
200mA
3
V B E( sat) 1
-55C (Case Temp) p) 25C (Case Tem Temp) 5C (Case 12
12
5
Tem
emp
se T (Ca
se
as
C
V C E( sat) 0 0.01 0.05 0.1 0.5 1
-5
C 5
0
0
1
2
3
4
5
0
0
0.2
0.4
125
C
0.6
25C
1
0.8
-55C
(C
1
25
50mA
(Ca
(Cas
eT
C
e Te
2
100mA
2
emp
)
) mp)
p)
0.2
0.80.2
a b
o3.30.2
Weight : Approx 2.0g a. Type No. b. Lot No.
1.0
1.2
1.4
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 50 5
j- a( C/W)
hFE - IC Characteristics (Typical)
t o n*t s tg *t f ( s)
125C DC Curr ent Gain h FE 25C -55C
t on* t stg * t f - I C Characteristics (Typical)
j-a - t Characteristics
5
VCC 200V I C: IB1:-I B 2= 10:1:2 1 0.5 t on tf 0.1 0.1
Transient Thermal Resistance
tstg
Swi tchi ng T im e
1
10
0.5 0.3
5 0.01
0.05
0.1
0.5
1
5
0.5
1
5
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20 10 5
10
1m s
10
Reverse Bias Safe Operating Area
20 10 30
P c - T a Derating
s
5 Collector Cur rent I C( A)
Maximu m Power Di ssip ation P C( W)
0
W
Collector Curren t I C( A)
m
ith
s
20
In fin
1 0.5
D C
ite
1 0.5
he at si nk
0.1 0.05 Without Heatsink Natural Cooling
10
0.1 0.05
Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than1%
2 0.01 2 5 10 50 100 500 0.01 5 10 50 100 500 0 0
Without Heatsink 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
87

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